http://www.edaboard.com/thread41227.html"MOS fets usually have lower gate leakage current. MOS fets are more readily available as high power/high current devices. MOS fets generally have higher forward transconductance (10s of Siemens vs fractions of Siemens). You must be careful not to forward bias the gate-source diode in a JFET. Providing reverse polarity (e.g a negative gate-source voltage on an N channel MOSFET) has no deleterious effect, as long as you stay within the device ratings."
Aka MOSFETs are a bit more flexible